PE507BA Datasheet - UNIKC

PE507BA MOSFET

PE507BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID -28A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Tc = 25 °C -28 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID -18 -10 Pulsed Drain Current1 TA= 70 °C IDM -8 -50 Avalanche Current IAS -42 Avalanche Energy L =0.1mH EAS 87 TC = .

PE507BA Datasheet (514.86 KB)