PE526BA Datasheet - UNIKC

PE526BA MOSFET

PE526BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ @VGS = 10V ID3 49A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 49 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 31 17 Pulsed Drain Current1 TA= 70 °C IDM 14 50 Avalanche Current IAS 47 Avalanche Energy L =0.1mH EAS 110 TC = 25 °C 16 Power Diss.

PE526BA Datasheet (440.92 KB)