PE529BA Datasheet - UNIKC

PE529BA MOSFET

PE529BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 9.5mΩ @VGS = -4.5V ID -34A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Tc = 25 °C -34 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID -21 -12 Pulsed Drain Current1 TA= 70 °C IDM -9.8 -100 Avalanche Current IAS -39 Avalanche Energy L =0.1mH EAS 76 T.

PE529BA Datasheet (514.11 KB)