PE506BA Datasheet - UNIKC

PE506BA MOSFET

PE506BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 38A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Tc = 25 °C Tc = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 38 24 12 9.8 60 32 Avalanche Energy L =0.1mH EAS 53 TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C.

PE506BA Datasheet (422.54 KB)