SPM6M020-060D Datasheet - Sensitron

SPM6M020-060D Three-Phase MOSFET BRIDGE

Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Function Isolated Input for High-side IGBT of Phase A Return for Input at 1 NC Isolated Input for Low-side IGBT of Phase A Return for Input at 4 NC Isolated Input for High-side IGBT of Phase B Return for Input at 7 NC Isolated Input for Low-side I.

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev. SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS Gate to Source Voltage www.DataSheet4U.com BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS .

SPM6M020-060D Features

* delay time is about 50 usec. Idco ( Pin 26 ), is an absolute value current sense output of DC bus current. The sensor gain is 0.05V/A. The internal impedance of this output is 1KΩ, and internal filter capacitance

SPM6M020-060D Datasheet (205.74 KB)