LH28F016SA Datasheet PDF - Sharp Electrionic Components 16M (1M bb 16/ 2M bb 8) Flash Memory Specs

LH28F016SA - 16M (1M bb 16/ 2M bb 8) Flash Memory

Datasheet Summary

Description

SYMBOL TYPE NAME AND FUNCTION BYTE-SELECT ADDRESS: Selects between high and low byte when device is in x8 mode.

This address is latched in x8 Data Writes.

Not used in x16 mode (i.e., the A0 input buffer is turned off when BYTE is high).

Features

16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW.
User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.43 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block 32 Independently Lockable Blocks (64K) Revolutionary Architecture.
Pipelined Command Execution.
Write During Erase.
Command Superset of Sharp LH28F008SA 3/5 CE1 NC A20 A19 A18 A17 A16.

Datasheet Details

Part number	LH28F016SA
Manufacturer	Sharp Electrionic Components
File Size	317.11 KB
Description	16M (1M bb 16/ 2M bb 8) Flash Memory
Datasheet	LH28F016SA Datasheet
Additional preview pages of the LH28F016SA datasheet.

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Full PDF Text Transcription

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LH28F016SA FEATURES 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW • • • • • • • User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.43 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block 32 Independently Lockable Blocks (64K) Revolutionary Architecture – Pipelined Command Execution – Write During Erase – Command Superset of Sharp LH28F008SA 3/5 CE1 NC A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 VPP RP A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND DQ13 DQ5 DQ12 DQ4 VCC GND DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE NC NC • 50 µA (Typ.

Published: Mar 22, 2005 |