LPT16ED

30 GHz SiGe Bipolar Transistor Final

SiGe Semiconductor Inc.

LPT16ED Features

* Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment) Ordering Information Type LPT16ED Package Bare Die Remark Shipped in Waffle Pack Fu

LPT16ED General Description

The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appro.

LPT16ED Datasheet (333.17 KB)

LPT16ED Datasheet Preview — Preview of LPT16ED PDF

Datasheet Details

Part number:

LPT16ED

Manufacturer:

SiGe Semiconductor Inc.

File Size:

333.17 KB

Description:

30 ghz sige bipolar transistor final.
LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators Point-to-point ra.

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LPT16ED GHz SiGe Bipolar Transistor Final SiGe Semiconductor Inc.

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LPT16ED Features

LPT16ED General Description

Datasheet Details

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