LPT16ED 30 GHz SiGe Bipolar Transistor Final

SiGe Semiconductor Inc.

Description

LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators Point-to-point ra.
The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz.

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Datasheet Specifications

Part number: LPT16ED
Manufacturer: SiGe Semiconductor Inc.
File Size: 333.17 KB
Datasheet: LPT16ED_SiGeSemiconductorInc..pdf
Description: 30 GHz SiGe Bipolar Transistor Final

Features

* Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment) Ordering Information Type LPT16ED Package Bare Die Remark Shipped in Waffle Pack Fu

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LPT16ED GHz SiGe Bipolar Transistor Final SiGe Semiconductor Inc.

SiGe Semiconductor Inc. LPT16ED-like datasheet