LPT16ED Datasheet - SiGe Semiconductor Inc.

LPT16ED 30 GHz SiGe Bipolar Transistor Final

The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appro.

LPT16ED Features

* Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment) Ordering Information Type LPT16ED Package Bare Die Remark Shipped in Waffle Pack Fu

LPT16ED Datasheet (333.17 KB)