LPT16ED - 30 GHz SiGe Bipolar Transistor Final

SiGe Semiconductor Inc.

Datasheet Details

Part number	LPT16ED
Manufacturer	SiGe Semiconductor Inc.
File Size	333.17 KB
Description	30 GHz SiGe Bipolar Transistor Final
Datasheet	LPT16ED_SiGeSemiconductorInc..pdf

The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz.

Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment) Ordering Information Type LPT16ED Package Bare Die Remark Shipped in Waffle Pack Functional Block Diagram C B E 38-DST-01 Rev 2.3 Sept 5/02 1 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final Absolute Maximum Ratings Operation in excess of any one of Absolute Maximum Rating.

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Published: Apr 25, 2005 |