Si2301
SiPU
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P-channel mosfet.
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SI2300 - N-Channel MOSFET
(Kexin)
SMD Type
N-Channel Enhancement MOSFET SI2300 (KI2300)
MOSFIECT
Features
VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A.
SI2300 - N-Channel MOSFET
(HAOCHANG)
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS
SI2300 N-Channel Enhancement MOSFET
Features
VDS=20V,RDS(ON)=40m @VGS=.
SI2300 - N-Channel MOSFET
(CCSemi)
MOSFET
N-Channel Enhancement Mode Field Effect Transistor
SI2300
Features
◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.
SI2300 - Plastic-Encapsulate Mosfets
(HOTTECH)
Plastic-Encapsulate Mosfets
FEATURES
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Aval.
SI2300 - N-Channel MOSFET
(MCC)
MCC R
Micro Commercial Components
Micro Commercial Components 130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
SI2300
Features
• Ha.
Si2300 - N-Channel MOSFET
(SiPU)
Si2300
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
SI2300 - 20V N-Channel MOSFET
(JinYu)
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
70m Ω 80mΩ
Features Advanced trench proc.
SI2300DS - N-Channel MOSFET
(Vishay Siliconix)
.vishay.
Si2300DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
SOT-23 (TO-236)
D 3
Marking code: P2
1 G Top View
2 S
FEATURES
• TrenchFET.
SI2300DS-T1-GE3 - N-Channel MOSFET
(VBsemi)
SI2300DS-T1-GE3
.VBsemi.
SI2300DS-T1-GE3 N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 a.
SI2301 - P-Channel MOSFET
(JinYu)
20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A
130mΩ 190mΩ
Features Advanced trench pr.
