Si2305 - P-Channel MOSFET

Key Features

Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package.

Si2305 p-channel mosfet by SiPU - Datasheet Preview

Datasheet Details

Part number	Si2305
Manufacturer	SiPU
File Size	187.73 KB
Description	P-Channel MOSFET
Datasheet	Si2305 Datasheet

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Other Datasheets by SiPU

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Si2300	N-Channel MOSFET
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SI2301BDS	P-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2305 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit -20 ±12 -4.0 IDM -12 IS -1.25 PD 1.