Si2305 Datasheet Text
Si2305
P-Channel Enhancement Mode Field Effect Transistor
Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
-20V
-4.0A
95@ VGS=-4.5V 115 @ VGS=-2.5V
NOTE The Si2305 is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted
Symbol
VDS VGS ID
Limit
-20 ±12 -4.0
IDM -12
IS -1.25 PD 1.25
TJ,TSTG
-55 to 150
Unit
V V A
A...
