Si2301DS Datasheet | TEMIC Semiconductors

P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) - 12 r DS(on) (W) 0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V ID (A) - 2.3 - 1.9 TO-236 (SOT-23) G1 S2 3D Top View Si2301DS (A1)- - Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 "8 - 2.3 - 1.5 - 10 - 1.6 1.25 0.8 - 55 to 150 Unit V W _C Thermal Resistance Ratings Parameter Symbol Limit...