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P-Channel 1.25-W, 2.5-V Rated MOSFET
Product Summary
VDS (V) –12
rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V
ID (A) –2.3 –1.9
Si2301DS
TO-236 (SOT-23)
G1 S2
3D
Top View Si2301DS (A1)* *Marking Code
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
TA= 25_C TA= 70_C
Symbol VDS VGS
ID IDM IS
PD TJ, Tstg
Limit
–12 "8 –2.3 –1.5 –10 –1.6 1.25 0.
Si2301DS Datasheet
