SI2301DS
SI2301DS is P-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) =-20V
- RDS(ON) ＜ 100mΩ (VGS =-4.5V)
- RDS(ON) ＜ 150mΩ (VGS =-2.5V)
G1
S2
3D
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.1 -0.1
+0.21.6 -0.1
0.55 0.4
Unit: mm
0.15 +0.02 -0.02
1. Gate 2. Source 3. Drain
0-0.1 +0.10.68
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =150℃)- 1
Ta=25℃ Ta=70℃
Pulsed Drain Current
- 2
Power Dissipation
- 1
Ta=25℃
Ta=70℃
Thermal Resistance.Junction- to-Ambient
- 1
- 3
Junction Temperature
Storage Temperature...
