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SI2301 - P-Channel Enhancement Mode Field Effect Transistor

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MCC

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SI2301 P-Channel Enhancement Mode Field Effect Transistor by MCC - Datasheet Preview — Datasheet preview – SI2301

Datasheet Details

Part number	SI2301
Manufacturer	MCC
File Size	338.81 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	SI2301 Datasheet
Additional preview pages of the SI2301 datasheet.

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Features

Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -20 -2.8 -10 ±8 1.25 100 -55 to +150 -55 to +150 Unit V A A V W ℃/W ℃ ℃ -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V R.

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Published: Dec 13, 2013 |