Si2301 - P-Channel MOSFET

Key Features

Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package.

Si2301 p-channel mosfet by SiPU - Datasheet Preview

Datasheet Details

Part number	Si2301
Manufacturer	SiPU
File Size	187.60 KB
Description	P-Channel MOSFET
Datasheet	Si2301 Datasheet

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Si2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -3.6A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2301 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit -20 ±12 -3.6 IDM -11 IS -1.25 PD 1.