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SI2305
20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A
130mΩ 190mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23(PACKAGE)
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1)
Symbol
Limit
Unit
VDS VGS ID IDM
2)
-20 ±8 -2.2 -8 1.25 0.
SI2305 Datasheet
