SI2305A - P-Channel MOSFET

Key Features

s.
VDS (V) = -20V.
RDS(ON)＜40mΩ(VGS=-4.5V),ID=-4.2A.
RDS(ON)＜50mΩ(VGS=-2.5V),ID=-3.4A UMW SI2305A P-Channel MOSFET SOT.
23 D G S 1. GATE 2. SOURCE 3. DRAIN.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-source voltage Gate-source voltage Continuous drain current -- Pulsed drain current TA=25℃ TA=70℃ Power dissipation -- TA=25℃ TA=70℃ Thermal Resistance. Junction-to-Ambient Operating junction and storage temperature range Symbol VDS VGS ID IDM PD RθJA Tj,.

SI2305A p-channel mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	SI2305A
Manufacturer	UMW
File Size	395.25 KB
Description	P-Channel MOSFET
Datasheet	SI2305A Datasheet

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UMW R ■ Features ● VDS (V) = -20V ● RDS(ON)＜40mΩ(VGS=-4.5V),ID=-4.2A ● RDS(ON)＜50mΩ(VGS=-2.5V),ID=-3.4A UMW SI2305A P-Channel MOSFET SOT–23 D G S 1. GATE 2. SOURCE 3. DRAIN ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-source voltage Gate-source voltage Continuous drain current -- Pulsed drain current TA=25℃ TA=70℃ Power dissipation -- TA=25℃ TA=70℃ Thermal Resistance.Junction-to-Ambient Operating junction and storage temperature range Symbol VDS VGS ID IDM PD RθJA Tj,Tstg Rating -20 ±12 -4.2 -3.4 -10 1.38 0.8 90 -55 to +150 Unit V V A A W ℃/W ℃ www.umw-ic.