SI2300A
SI2300A is 20V N-ChanneI MOSFET manufactured by UMW.
Features
V(BR)DSS=20V ID=6A RDS(ON)<25mΩ(VGS=4.5V) RDS(ON)<34mΩ(VGS=2.5V) Trench FET Power MOSFET
3.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
4.Absolute Maximum Ratings TA= 25°C
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature
2.Applications
Battery protection Load switch Power management
Symbol VDS VGS ID IS PD RθJA TJ TSTG
Rating 20 ±12 6 0.6 1.25
312.5 150 -55~+150
Units V V A A W
°C/W °C °C
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
1 of 7
.umw-ic.
UMW SI2300A
20V N-Channe I MOSFET
5.Electrical Characteristics TA= 25°C
Parameter Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a Diode forward voltage Dynamic Total gate charge Gate-source charge Gate-drain charge Input capacitance b Output capacitance b Reverse transfer capacitance b Switching b Turn-on delay time Rise time Turn-off delay time Fall time
Symbol
Conditions
Min Typ Max Units
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON) g FS VSD
VGS=0V, ID=10µA VDS=VGS, ID=50µA VDS=0V, VGS=±8V VDS=20V, VGS=0V VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=5V, ID=3.6A IS=0.94A,...
