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SI2300A - 20V N-ChanneI MOSFET

Description

SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction

Features

  • V(BR)DSS=20V ID=6A RDS(ON).

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Datasheet Details

Part number SI2300A
Manufacturer UMW
File Size 1.76 MB
Description 20V N-ChanneI MOSFET
Datasheet download datasheet SI2300A Datasheet

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Full PDF Text Transcription

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UMW SI2300A 20V N-ChanneI MOSFET 1.Features V(BR)DSS=20V ID=6A RDS(ON)<25mΩ(VGS=4.5V) RDS(ON)<34mΩ(VGS=2.5V) TrenchFET Power MOSFET 3.Pinning information Pin Symbol Description SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature 2.Applications Battery protection Load switch Power management 3 D G 2 S Symbol VDS VGS ID IS PD RθJA TJ TSTG Rating 20 ±12 6 0.6 1.25 312.5 150 -55~+150 Units V V A A W °C/W °C °C UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 7 www.umw-ic.
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