CCSemi SI2300
N-Channel MOSFET
| Part No. | SI2300 |
|---|---|
| Datasheet | SI2300 Download |
| Manufacturer | CCSemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A● VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A
● VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A
ABSOLUTE MAXIMUM RATINGS
Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃ -Pulsed Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board, t≤10sec. Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 20 ±10 3.8 15 1.25 100 -55 to 150 Unit V V A A W ℃/W ℃ Revision 2016/8/15 @2016-2017 CCSemi . MOSFETELECTRICAL CHARACTERISTICS
Ta=25℃ Parameter Symbol Test conditions Drain-Source Breakdown Voltage VDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Gate-Body Leakage IGSS VGS=±10V,VDS=0V Gate Threshold Voltage* VGS(th) VGS=VDS,ID=250uA VGS=4.5V,ID=5.0A Drain-Source On-state Resistance* RDS(ON) VGS=2