Kexin Electronics SI2300
N-Channel MOSFET
FEATURES
VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tj=125 Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±10 5.0 15 1.25 100 150 -55 to 150 Unit V A W /W 1 SMD Type SI2300 (KI2300) MOSFIECTELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage * Drain- Source on-state Resistance * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay T...