Datasheet Details
| Part number | SI2308A |
|---|---|
| Manufacturer | UMW |
| File Size | 724.63 KB |
| Description | 60V N-ChanneI MOSFET |
| Datasheet | SI2308A-UMW.pdf |
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Overview: UMW SI2308A 60V N-ChanneI MOSFET 1.
| Part number | SI2308A |
|---|---|
| Manufacturer | UMW |
| File Size | 724.63 KB |
| Description | 60V N-ChanneI MOSFET |
| Datasheet | SI2308A-UMW.pdf |
|
|
|
SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec.
Note.2: Surface Mounted on FR4 Board TA=25°C TA=70°C TA=25°C TA=70°C (Note.1) (Note.2) 2.Applications Load/Power Switching Interfacing Switching Logic Level Shift Battery Management for Ultra Small Portable 3 D G 2 S Symbol VDS VGS ID IDM PD RthJA TJ TSTG Rating 60 ±20 3 1.9 10 1.25 0.8 100 166 150 -55 to 150 Units V A W °C/W °C UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 7 www.umw-ic.com UMW SI2308A 60V N-ChanneI MOSFET 5.Electrical Characteristics TA= 25°C Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol Conditions VDSS ID=250µA, VGS=0V VDS=60V, VGS=0V IDSS VDS=60V,VGS=0V,TJ=55°C IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS, ID=250μA RDS(ON) VGS=10V, ID=3A VGS=4.5V, ID=1.9A ID(ON) VGS≥4.5V, VDS=10A VDS≥4.5V, VDS=4.5A gFS VDS=4.5A, ID=2A Ciss Coss VGS=0V, VDS=25V, f=1MHz Crss Rg VDS=25V, VGS=0V, f=1MHz Qg Qgs VDS=30V, VGS=10V, ID=2A Qgd tD(on) tr tD(off) tf VGS=4.5V, VDS=30V RL=30Ω, RG=6Ω ID=1A IS VSD IS=1A, VGS=0V Min Typ Max Units 60 V 0.5 µA 10 ±100 nA 1 3V 80 mΩ 95 6
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SI2308 | N-Channel 60V MOSFET | VBsemi |
| SiPU | SI2308 | N-Channel Enhancement Mode Field Effect Transistor | SiPU |
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SI2308BDS | N-Channel MOSFET | Vishay |
|
SI2308BDS | N-Channel 60V MOSFET | VBsemi |
 |
SI2308DS | N-Channel MOSFET | Vishay Siliconix |
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