SI2308A - 60V N-ChanneI MOSFET

General Description

SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Note.1

Key Features

VDS(V)=60V ID=3A(VGS=10V) RDS(ON).

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SI2308A 60v n-channei mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	SI2308A
Manufacturer	UMW
File Size	724.63 KB
Description	60V N-ChanneI MOSFET
Datasheet	SI2308A Datasheet

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UMW SI2308A 60V N-ChanneI MOSFET 1.Features VDS(V)=60V ID=3A(VGS=10V) RDS(ON)<80mΩ(VGS=10V), ID=3A RDS(ON)<95mΩ(VGS=4.5V), ID=1.9A 3.Pinning information Pin Symbol Description SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec. Note.2: Surface Mounted on FR4 Board TA=25°C TA=70°C TA=25°C TA=70°C (Note.1) (Note.2) 2.