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SI2302A Datasheet 20v N-channei MOSFET

Manufacturer: UMW

Overview: UMW SI2302A 20V N-ChanneI MOSFET 1.

Datasheet Details

Part number SI2302A
Manufacturer UMW
File Size 156.55 KB
Description 20V N-ChanneI MOSFET
Datasheet SI2302A-UMW.pdf

General Description

The SI2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

3.Pinning information Pin Symbol Description SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current *1 Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient *1 *2 Junction Temperature Storage Temperature Range Notes : *1.Surface Mounted on FR4 Board, t ≤ 5 sec.

Key Features

  • VDS=20V RDS(ON)=45mΩ(VGS=4.5V), ID=3.6A RDS(ON)=60mΩ(VGS=2.5V), ID=3.1A 3 D G 2 S Symbol VDS VGS ID IDM PD RthJA TJ TSTG Rating 20 ±8 3.6 3.1 10 1.25 0.8 100 166 150 -55 to 150 Units V A W °C/W °C UTD Semiconductor Co. ,Limited www. umw-ic. com Nov.2024 1 of 7 www. umw-ic. com UMW SI2302A 20V N-ChanneI MOSFET 5.Electrical Characteristics TA= 25°C Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage VDSS ID=250µA, VGS=0V 20 V Zero Gate Voltage Drain Curre.

SI2302A Distributor