Datasheet4U Logo Datasheet4U.com

SI2302A - 20V N-ChanneI MOSFET

General Description

The SI2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS=20V RDS(ON)=45mΩ(VGS=4.5V), ID=3.6A RDS(ON)=60mΩ(VGS=2.5V), ID=3.1A 3 D G 2 S Symbol VDS VGS ID IDM PD RthJA TJ TSTG Rating 20 ±8 3.6 3.1 10 1.25 0.8 100 166 150 -55 to 150 Units V A W °C/W °C UTD Semiconductor Co. ,Limited www. umw-ic. com Nov.2024 1 of 7 www. umw-ic. com UMW SI2302A 20V N-ChanneI MOSFET 5.Electrical Characteristics TA= 25°C Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage VDSS ID=250µA, VGS=0V 20 V Zero Gate Voltage Drain Curre.

📥 Download Datasheet

Datasheet Details

Part number SI2302A
Manufacturer UMW
File Size 156.55 KB
Description 20V N-ChanneI MOSFET
Datasheet download datasheet SI2302A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI2302A N-Channel MOSFET MCC
SI2302ADS N-Channel MOSFET Vishay Siliconix
SI2302 N-Channel MOSFET VBsemi
SI2302 N-channel MOSFET MCC
SI2302 20V N-Channel MOSFET JinYu

Other Datasheets by UMW

Part Number Description
SI2300A 20V N-ChanneI MOSFET
SI2301B P-Channel MOSFET
SI2304A 30V N-ChanneI MOSFET
SI2305A P-Channel MOSFET
SI2306A 30V N-ChanneI MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UMW SI2302A 20V N-ChanneI MOSFET 1.Description The SI2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. 3.Pinning information Pin Symbol Description SOT-23 1 G GATE 2 S SOURCE 3 D DRAIN 1 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current *1 Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient *1 *2 Junction Temperature Storage Temperature Range Notes : *1.Surface Mounted on FR4 Board, t ≤ 5 sec. *2.Surface Mounted on FR4 Board. TA=25°C TA=70°C TA=25°C TA=70°C 2.Features VDS=20V RDS(ON)=45mΩ(VGS=4.5V), ID=3.