Datasheet Summary
SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2302 N-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A2SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature
Symbol
VDS VGS ID IS PD RθJA TJ TSTG
Value
20 ±8 2.1 0.6 0.35 357 150 -55 ~+150
Unit V
A W ℃/W ℃
YANGJING MICROELECTRONICS
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