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SI2302DS - N-channel FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: SI2302DS in SOT23.

2.

Key Features

  • s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MSB003 MBB076 d s SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.