Datasheet Summary
N-channel enhancement mode field-effect transistor
Rev. 02
- 20 November 2001
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23.
2. Features s s s s TrenchMOS™ technology Very fast switching Logic level patible Subminiature surface mount package.
3. Applications s Battery management s High speed switch s Low power DC to DC converter.
4. Pinning information
Table 1: Pin 1 2 3 Pinning
- SOT23, simplified outline and symbol Description gate (g)
Simplified outline
Symbol source (s) drain (d) g 1 Top view 2
MSB003 MBB076 d s
SOT23
1.
TrenchMOS is...
