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20V N-Cha
SI2302
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
3.6A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0e 10e
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1)
Symbol
Limit
Unit
VDS VGS ID IDM
2)
20 ±8 2.3 8 1.25 0.
SI2302 Datasheet
