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P-Channel 2.5 V (G-S) MOSFET
Si2301BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 20 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V
ID (A)b - 2.4 - 2.0
TO-236 (SOT-23)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
G1 S2
3D
Top View Si2301 BDS (L1)* * Marking Code
Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C TA = 70 °C
ID
- 2.4 - 1.9
- 2.2 - 1.
SI2301BDS Datasheet
