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P-Channel 30-V (D-S) MOSFET
Si2303DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.240 @ VGS = –10 V 0.460 @ VGS = –4.5 V
ID (A)
–1.7 –1.3
TO-236 (SOT-23)
G1 S2
3D
Top View Si2303DS (A3)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS –30 VGS "20
Continuous Drain Current (TJ = 150_C) (surface mounted on FR4 board, t v 5 sec) Pulsed Drain Currenta Continuous Source Current (MOSFET Diode Conduction) (surface mounted on FR4 board, t v 5 sec)
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
ID IDM IS
PD TJ, Tstg
–1.7 –1.4 –10
–1.25
1.25 0.
SI2303DS Datasheet
