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SI2303DS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • RDS(ON) ＜ 200mΩ (VGS =-10V).
  • RDS(ON) ＜ 380mΩ (VGS =-4.5V) G1 S2 3D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃).
  • 1 Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Diss.

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SMD Type P-Channel Enhancement MOSFET SI2303DS (KI2303DS) MOSFET ■ Features ● VDS (V) =-30V ● RDS(ON) ＜ 200mΩ (VGS =-10V) ● RDS(ON) ＜ 380mΩ (VGS =-4.5V) G1 S2 3D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃) *1 Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient (surface mounted on FR4 board) Junction Temperature Storage Temperature Range *1 Surface Mounted on 1” x 1” FR4 Board.