The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Si2303ADS
New Product
Vishay Siliconix
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.240 @ VGS = –10 V 0.460 @ VGS = –4.5 V
ID (A)b
–1.4 –1.0
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2303DS (3A)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.75 0.9 0.57 –55 to 150
Symbol
VDS VGS
5 sec
–30 "20 –1.4 –1.1 –10
Steady State
Unit
V
–1.3 –1.0 A –0.6 0.7 0.
SI2303ADS Datasheet
