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Si2303BDS
P-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (O N) ( m W ) Typ
-20V
-3.6A
82 @V G S = -4.5V 93 @V G S = -2.5V
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. S OT-23 package.
S OT-23
D S
G
D
G S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
-20
V
Gate-S ource Voltage
VGS
12
V
Drain C urrent-C ontinuous a @ TJ=125 C
ID
-3.6
A
-P ulsed b
IDM
-11
A
Drain-S ource Diode Forward C urrent a
IS
-1.25
A
Maximum P ower Dissipation a
PD
1.
Si2303BDS Datasheet
