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Si2303CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) - 30 RDS(on) (Ω) 0.190 at VGS = - 10 V 0.330 at VGS = - 4.5 V ID (A)a - 2.7 2 nC - 2.1 Qg (Typ.)
FEATURES
• TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2303CDS (N3)* * Marking Code Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit - 30 ± 20 - 2.7 - 2.
SI2303CDS Datasheet
