Datasheet Summary
-30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
SOT-23-3L
REF.
A B C D E
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
Millimeter
Min. 1.90 1.00 0.10 0.40 0.85
Max. REF.
1.30 0.20
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ± 20
Continuous Drain Current Pulsed Drain Current
Maximum Power...
