Datasheet4U Logo Datasheet4U.com

SI2307 - -30V P-Channel Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ± 20 Continuous Drai.

📥 Download Datasheet

Datasheet Details

Part number SI2307
Manufacturer PUOLOP
File Size 1.30 MB
Description -30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SI2307 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Si2307 P-Channel Enhancement Mode Field Effect Transistor SiPU
SI2307 P-Channel Enhancement Mode Field Effect Transistor MCC
Si2307CDS P-Channel 30-V (D-S) MOSFET Vishay
SI2307DS P-Channel MOSFET Vishay Siliconix
SI2300 N-Channel MOSFET Kexin

Other Datasheets by PUOLOP

Part Number Description
SI2304 30V N-Channel Enhancement Mode MOSFET
SI2310 N-channel MOSFET
SI2333 P-ChannelEnhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ± 20 Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25oC TA = 75oC ID IDM PD -5.3 -20 1.