SI2307 Datasheet -30v P-channel Enhancement Mode MOSFET

Manufacturer: PUOLOP

Overview: SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), Vgs@-4.5V, Ids@-3.

Datasheet Details

Part number	SI2307
Manufacturer	PUOLOP
File Size	1.30 MB
Description	-30V P-Channel Enhancement Mode MOSFET
Datasheet	SI2307-PUOLOP.pdf

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ± 20 Continuous Drai.

Brand Logo	Part Number	Description	Manufacturer
SiPU	Si2307	P-Channel Enhancement Mode Field Effect Transistor	SiPU
	SI2307	P-Channel Enhancement Mode Field Effect Transistor	MCC
	SI2307BDS	P-Channel Enhancement MOSFET	Kexin
	Si2307CDS	P-Channel 30-V (D-S) MOSFET	Vishay
	SI2307DS	P-Channel MOSFET	Vishay Siliconix

Part Number	Description
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