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SI2307DS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-3.0A (VGS =-10V).
  • RDS(ON) ＜ 80mΩ (VGS =-10V).
  • RDS(ON) ＜ 140mΩ (VGS =-4.5V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation.

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SMD Type P-Channel Enhancement MOSFET SI2307DS (KI2307DS) ■ Features ● VDS (V) =-30V ● ID =-3.0A (VGS =-10V) ● RDS(ON) ＜ 80mΩ (VGS =-10V) ● RDS(ON) ＜ 140mΩ (VGS =-4.5V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range Ta = 25℃ Ta = 70℃ Ta = 25℃ Ta = 70℃ t≤10 sec Symbol VDS VGS ID IDM PD RthJA TJ Tstg 5 sec -30 ±20 -3 -2.5 -12 1.25 0.