Kexin Electronics SI2307DS
P-Channel Enhancement MOSFET
| Part No. | SI2307DS |
|---|---|
| Datasheet | SI2307DS Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-30V● ID =-3.0A (VGS =-10V)
● RDS(ON) ＜ 80mΩ (VGS =-10V)
● RDS(ON) ＜ 140mΩ (VGS =-4.5V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range Ta = 25℃ Ta = 70℃ Ta = 25℃ Ta = 70℃ t≤10 sec Symbol VDS VGS ID IDM PD RthJA TJ Tstg 5 sec -30 ±20 -3 -2.5 -12 1.25 0.8 100 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET P-Channel Enhancement MOSFET SI2307DS (KI2307DS)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance *1 On state drai...
