SI2307DS Datasheet | Vishay

Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 r DS(on) (W) 0.080 @ VGS = - 10 V 0.140 @ VGS = - 4.5 V ID (A) - 3 - 2 TO-236 (SOT-23) 1 3 D Top View Si2307DS (A7)- - Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 30 "20 - 3 - 2.5 - 12 - 1.25 1.25 Unit W 0.8 - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface mounted on FR4 board. b. t v 5 sec. Document Number: 70843 S-60570- Rev. A, 16-Nov-98 .vishay. S Fax Back 408-970-5600 Symbol Rth JA Typical Maximum...