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SI2304 - 30V N-Channel Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack.

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Datasheet Details

Part number SI2304
Manufacturer PUOLOP
File Size 1.36 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SI2304 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions - D SOT-23 GS REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.