| Part Number | Si2304 Datasheet |
|---|---|
| Manufacturer | SiPU |
| Overview | Si2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID. Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 65@ VGS=4.5V 90@ VGS=2.5V NOTE The Si2304 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source . |
Si2304 Datasheet and Specifications PDF
The Si2304 is a N-Channel Enhancement Mode Field Effect Transistor.
| Part Number | SI2304 Datasheet |
|---|---|
| Description | N-channel FET |
| Manufacturer | Micro Commercial Components |
| Overview |
MCC R
Micro Commercial Components
Features
Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4939
SI2304
• Halogen free available upon request.
Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4939
SI2304
* Halogen free available upon request by adding suffix "-HF" * Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) * Epoxy meets UL 94 . |
| Part Number | SI2304 Datasheet |
|---|---|
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Manufacturer | PUOLOP |
| Overview | SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced trench process technology High Density Cell Design For. Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions - D SOT-23 GS REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 0.4. |