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SI2304DS - N-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) = 30V ƽ RDS(ON) ˘ 117m¡ (VGS = 10V) ƽ RDS(ON) ˘ 190m¡ (VGS = 4.5V) G1 S2 3D    627       3 1 2               8QLW PP    .
  • DWH 6RXUFH 'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.
  • 1 Ta=25ć Ta=70ć Pulsed Drain Current.
  • 2 Power Dissipation Ta=25ć Ta=70ć Th.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET SI2304DS (KI2304DS) MOSFET Ƶ Features ƽ VDS (V) = 30V ƽ RDS(ON) ˘ 117m¡ (VGS = 10V) ƽ RDS(ON) ˘ 190m¡ (VGS = 4.5V) G1 S2 3D    627       3 1 2               8QLW PP    *DWH 6RXUFH 'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta=25ć Ta=70ć Pulsed Drain Current *2 Power Dissipation Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.Junction- to-Ambient *3 Junction Temperature Storage Temperature Range *1 Surface Mounted on FR4 Board, t İ 5 sec.