Kexin Electronics SI2304DS
N-Channel Enhancement MOSFET
| Part No. | SI2304DS |
|---|---|
| Datasheet | SI2304DS Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
ƽ VDS (V) = 30V ƽ RDS(ON) ˘ 117m¡ (VGS = 10V) ƽ RDS(ON) ˘ 190m¡ (VGS = 4.5V) G1 S2 3D 627 3 1 2 8QLW PP *DWH 6RXUFH 'UDLQ ƵABSOLUTE MAXIMUM RATINGS
Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta=25ć Ta=70ć Pulsed Drain Current *2 Power Dissipation Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.Junction- to-Ambient *3 Junction Temperature Storage Temperature Range *1 Surface Mounted on FR4 Board, t İ 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 30 ±20 2.5 2.0 10 1.25 0.8 100 166 150 -55 to 150 Unit V A W ć/W ć 1 SMD Type MOSFET N-Channel Enhancement MOSFET SI2304DS (KI2304DS) ƵELECTRICAL CHARACTERISTICS
Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On-State Drain Currenta *1 Static Drain-Source On-Resistance *1 Forward Transc...
