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N-Channel 30-V (D-S) MOSFET
Si2304DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
ID (A)
2.5 2.0
TO-236 (SOT-23)
G1 S2
3D
Top View Si2304DS (A4)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
TA= 25_C TA= 70_C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
30 "20 2.5 2.0 10 1.25 1.25 0.80 –55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc
Parameter
Symbol
RthJA
Notes a.
Si2304DS Datasheet
