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Si2304 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package.

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Datasheet Details

Part number Si2304
Manufacturer SiPU
File Size 121.14 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet Si2304 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 20V 3.6A 65@ VGS=4.5V 90@ VGS=2.5V NOTE The Si2304 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit 20 ±8 3.6 IDM 12 IS 1.25 PD 1.