SI2308 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

°Super high dense cell design for low RDS(ON) °Rugged and reliable °Simple drive requirement °SOT-23 package.

SI2308 n-channel enhancement mode field effect transistor by SiPU - Datasheet Preview

Datasheet Details

Part number	SI2308
Manufacturer	SiPU
File Size	121.69 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	SI2308 Datasheet

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SI2308 N-Channel Enhancement Mode Field Effect Transistor FEATURES °Super high dense cell design for low RDS(ON) °Rugged and reliable °Simple drive requirement °SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mȤ) Typ 20V 3.6A 65@ VGS=4.5V 90@ VGS=2.5V NOTEğThe SI2308 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGSčTA=25¥unless otherwise notedĎ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125¥ Symbol VDS VGS ID Limit Unit 20 V ±8 V 3.6 A - Pulse d b IDM 12 A Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.25 A 1.