Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
Features
°Super high dense cell design for low RDS(ON) °Rugged and reliable °Simple drive requirement °SOT-23 package
PRODUCT SUMMARY
VDSS
RDS(ON) (mȤ) Typ
20V 3.6A
65@ VGS=4.5V 90@ VGS=2.5V
NOTEğThe SI2308 is available in a lead-free package
ABSOLUTE MAXIUM RATINGSčTA=25- unless otherwise notedĎ
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125-
Symbol
VDS VGS ID
Limit
Unit
±8
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
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