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P-Channel Power MOSFE
Production specification
SI2305DS
DESCRIPTION
SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits,and low in-line power loss are required. The product is in a very small outline surface mount package.
FEATURE
20V/3.3A, RDS(ON) = 68mΩ @VGS = 4.5V
20V/2.2A, RDS(ON) = 89mΩ @VGS = 2.
SI2305DS Datasheet
