Download SI2308DS Datasheet PDF
Kexin Semiconductor
SI2308DS
SI2308DS is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features - VDS (V) = 60V - ID = 2 A (VGS = 10V) - RDS(ON) < 160mΩ (VGS = 10V) - RDS(ON) < 220mΩ (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 G1 S2 3D 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Ta=25℃ Ta=70℃ (Note.1) (Note.2) Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec. Note.2: Surface Mounted on FR4 Board Symbol VDS VGS ID IDM PD Rth JA TJ Tstg Rating 60 ±20 2 1.6 10 1.25 0.8 100 166 150 -55 to 150 Unit...