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SI2308DS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 2 A (VGS = 10V).
  • RDS(ON) ＜ 160mΩ (VGS = 10V).
  • RDS(ON) ＜ 220mΩ (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 G1 S2 3D 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta=70℃ Powe.

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SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) ■ Features ● VDS (V) = 60V ● ID = 2 A (VGS = 10V) ● RDS(ON) ＜ 160mΩ (VGS = 10V) ● RDS(ON) ＜ 220mΩ (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 G1 S2 3D 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Ta=25℃ Ta=70℃ (Note.1) (Note.2) Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec. Note.