SI2308DS
SI2308DS is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Available
- Trench FET® Power MOSFET
- 100 % Rg Tested
TO-236 (SOT-23)
G1 S2
3D
Top View Si2308DS (A8)-
- Marking Code
Ordering Information: Si2308DS-T1 Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 60 ± 20 2.0 1.6 10 1.0 1.25 0.80
- 55 to 150
Unit V
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc
Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board.
Symbol Rth JA
For SPICE model information via the Worldwide Web: .vishay.//product/spice.htm
- Pb containing terminations are not Ro HS pliant, exemptions may...
