Datasheet Summary
P-Channel Enhancement Mode Field Effect Transistor
Features
°Super high dense cell design for low RDS(ON) °Rugged and reliable °Simple drive requirement °SOT-23 package
PRODUCT SUMMARY
VDSS
RDS(ON) (mȤ) Typ
-20V
-3.6A
95@ VGS=-4.5V 115 @ VGS=-2.5V
NOTEğThe SI2301BDS is available in a lead-free package
ABSOLUTE MAXIUM RATINGSčTA=25- unless otherwise notedĎ
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125-
Symbol
VDS VGS ID
Limit
Unit
-20
±12
-3.6
- Pulse d b
-11
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
-1.25...
