SI2301BDS Overview
SI2301BDS P-Channel Enhancement Mode Field Effect Transistor.
SI2301BDS Key Features
- Pulse d b
- 55 to 150
- 0.5 -0.8 -1.5 V
- 0.81 -1.2 V
- VGS=2.5V -VGS=10.5~3.5V
- ID,Drain Current(A)
- ID, Drain Current (A)
- VGS=1.5V
SI2301BDS datasheet by SiPU.
| Part number | SI2301BDS |
|---|---|
| Datasheet | SI2301BDS-SiPU.pdf |
| File Size | 122.13 KB |
| Manufacturer | SiPU |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
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SI2301BDS P-Channel Enhancement Mode Field Effect Transistor.
View SI2301BDS datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| SI2301BDS | P-Channel MOSFET | Vishay Siliconix | |
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SI2301BDS | P-Channel Enhancement MOSFET | Kexin |
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SI2301BDS-T1-GE3 | P-Channel MOSFET | VBsemi |
| Si2301BD | P-Channel MOSFET | Vishay Siliconix | |
| UMW | SI2301B | P-Channel MOSFET | UMW |
| Part Number | Description |
|---|---|
| Si2301 | P-Channel MOSFET |
| Si2300 | N-Channel MOSFET |
| Si2303BDS | P-Channel Enhancement Mode Field Effect Transistor |
| Si2304 | N-Channel Enhancement Mode Field Effect Transistor |
| Si2305 | P-Channel MOSFET |
| Si2306 | N-Channel Enhancement Mode Field Effect Transistor |
| Si2307 | P-Channel Enhancement Mode Field Effect Transistor |
| SI2308 | N-Channel Enhancement Mode Field Effect Transistor |
| Si2312 | N-Channel MOSFET |