SI2301BDS Overview
SI2301BDS P-Channel Enhancement Mode Field Effect Transistor.
SI2301BDS Key Features
- Pulse d b
- 55 to 150
- 0.5 -0.8 -1.5 V
- 0.81 -1.2 V
- VGS=2.5V -VGS=10.5~3.5V
- ID,Drain Current(A)
- ID, Drain Current (A)
- VGS=1.5V
SI2301BDS Details
| Part number | SI2301BDS |
|---|---|
| Datasheet | SI2301BDS Datasheet PDF (Download) |
| File Size | 122.13 KB |
| Manufacturer | SiPU |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
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