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Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V
ID (A)
- 2.3 - 1.9
TO-236 (SOT-23)
G
1 3 D Ordering Information: Si2301DS-T1
S
2
Top View Si2301DS (A1)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
- 20 "8 - 2.3 - 1.5 - 10 - 1.6 1.25 0.
SI2301DS Datasheet
