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SI2301DS-HF - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • RDS(ON) ＜ 130mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 190mΩ (VGS =-2.5V).
  • Pb.
  • Free Package May be Available. The G.
  • Suffix Denotes a Pb.
  • Free Lead Finish G1 S2 3D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS.

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SMD Type P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 130mΩ (VGS =-4.5V) ● RDS(ON) ＜ 190mΩ (VGS =-2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish G1 S2 3D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current *1 Ta=25℃ Ta=70℃ ID Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ IDM PD Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.