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SI2304A - N-Channel 30-V MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • RDS(ON) < 35mΩ (VGS =-10V),ID=3.6A.
  • RDS(ON) < 50 mΩ (VGS =-4.5V),ID=3A SI2304A N-Channel 30-V (D-S) MOSFET SOT.
  • 23 Equivalent Circuit D G S 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Tj=150℃.
  • 1 Pulsed Drain Current Ta=25℃ Ta=70℃ Power Dissipation.
  • 1 Thermal Resistance. Junction- to-Ambient Junction Temperature Storage Temperature Range Ta=25℃ Ta.

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Datasheet Details

Part number SI2304A
Manufacturer UDF
File Size 1.59 MB
Description N-Channel 30-V MOSFET
Datasheet download datasheet SI2304A Datasheet

Full PDF Text Transcription (Reference)

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■ Features ● VDS (V) = 30V ● RDS(ON) < 35mΩ (VGS =-10V),ID=3.6A ● RDS(ON) < 50 mΩ (VGS =-4.5V),ID=3A SI2304A N-Channel 30-V (D-S) MOSFET SOT–23 Equivalent Circuit D G S 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Tj=150℃ *1 Pulsed Drain Current Ta=25℃ Ta=70℃ Power Dissipation *1 Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Ta=25℃ Ta=70℃ t ≤ 5 sec Steady State *1.Surface Mounted on FR4 Board,.t ≤ 5 sec Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 30 ±20 3.6 3 16 1.25 0.8 100 130 150 -55 to 150 Unit V A W ℃/W ℃ www.udf-ic.