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■ Features
● VDS (V) = 30V ● RDS(ON) < 35mΩ (VGS =-10V),ID=3.6A ● RDS(ON) < 50 mΩ (VGS =-4.5V),ID=3A
SI2304A
N-Channel 30-V (D-S) MOSFET
SOT–23
Equivalent Circuit
D
G S
1. GATE 2. SOURCE 3. DRAIN
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current Tj=150℃ *1 Pulsed Drain Current
Ta=25℃ Ta=70℃
Power Dissipation
*1
Thermal Resistance.Junction- to-Ambient
Junction Temperature Storage Temperature Range
Ta=25℃ Ta=70℃ t ≤ 5 sec Steady State
*1.Surface Mounted on FR4 Board,.t ≤ 5 sec
Symbol VDS VGS ID IDM PD
RthJA TJ Tstg
Rating 30 ±20 3.6 3 16 1.25 0.8 100 130 150
-55 to 150
Unit V
A
W ℃/W
℃
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