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SI2307BDS Datasheet P-channel Enhancement MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) MOSFET.

Key Features

  • s.
  • VDS (V) =-30V.
  • RDS(ON) ＜ 78mΩ (VGS =-10V).
  • RDS(ON) ＜ 130mΩ (VGS =-4.5V) G1 S2 3D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Ta = 25℃ Continuous Drain Current (Tj=150℃).
  • 1 Ta = 70℃ Pulsed Drain Current.
  • 2 Power Dissipation.
  • 1 Ta = 25℃ Ta = 70℃ Thermal Resistance. Junction- to-Ambient.
  • 1 Thermal Resistance. Junction- to-Ambient.
  • 3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ T.

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