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SI2307BDS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • RDS(ON) ＜ 78mΩ (VGS =-10V).
  • RDS(ON) ＜ 130mΩ (VGS =-4.5V) G1 S2 3D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Ta = 25℃ Continuous Drain Current (Tj=150℃).
  • 1 Ta = 70℃ Pulsed Drain Current.
  • 2 Power Dissipation.
  • 1 Ta = 25℃ Ta = 70℃ Thermal Resistance. Junction- to-Ambient.
  • 1 Thermal Resistance. Junction- to-Ambient.
  • 3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ T.

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SMD Type P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) MOSFET ■ Features ● VDS (V) =-30V ● RDS(ON) ＜ 78mΩ (VGS =-10V) ● RDS(ON) ＜ 130mΩ (VGS =-4.5V) G1 S2 3D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Ta = 25℃ Continuous Drain Current (Tj=150℃) *1 Ta = 70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.Junction- to-Ambient *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg *1 Pulse width limited by maximum junction temperature. *2 Surface Mounted on FR4 board, t ≤ 5 s. *3 Surface Mounted on FR4 board. +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.