Si2307CDS Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - Material categorization: for definitions of pliance please see .vishay./doc?99912 Marking code: N7 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (n C) ID (A) a, b Configuration ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free 2 S -30 0.088 0.138 4.1 -3.5 Single APPLICATIONS - Load switch for portable devices D P-Channel MOSFET SOT-23 Si2307CDS-T1-E3 Si2307CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) a, b Pulsed drain current (10 μs pulse width) Continuous source-drain diode current a, b Maximum power dissipation a, b Operating junction and storage temperature range Soldering remendations (peak temperature) c TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg LIMIT -30 ± 20 -3.5 -2.8 -2.7 a, b -2.2 a, b -12 -1.5 -0.91 a, b 1.8 1.14 1.1 a, b 0.7 a, b -55 to +150 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c Maximum junction-to-foot (drain) t5s Steady state Notes a. Surface mounted on 1" x 1" FR4 board b. t = 5 s c. Maximum under steady state conditions is 166 °C/W SYMBOL Rth JA Rth JF TYPICAL 90 55 MAXIMUM 115...