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Si2309DS
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-60
rDS(on) (W)
0.340 @ VGS = -10 V 0.550 @ VGS = -4.5 V
ID (A)
- 1.25 -1
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2309DS (A9)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 100_C ID -0.85 IDM IAS -8 -5 1.25 0.8 -55 to 150 W _C A
Symbol
VDS VGS
Limit
-60 "20 -1.25
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Leada Notes a. Surface Mounted on FR4 Board.
SI2309DS Datasheet
