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SI2302 - N-channel MOSFET

Key Features

  • Rugged and Reliable.
  • Lead Free Product is Acquired.
  • High Dense Cell Design for Extremely Low RDS(ON).
  • Epoxy Meets UL 94 V-0 Flammability Rating.
  • Moisture Sensitivity Level 1.
  • Halogen Free. “Green” Device (Note 1).
  • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) SI2302 N-Channel Enhancement Mode Field Effect Transistor Maximum Ratings.
  • Operating Junction Temperature Range:.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) SI2302 N-Channel Enhancement Mode Field Effect Transistor Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 100°C/W Junction to Ambient Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 3.0 A Drain Current-Pulsed(Note 2) IDM 10 A Power Dissipation PD 1.25 W Note: 1.