SI2309DS
SI2309DS is P-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
ƽ VDS (V) =-60V ƽ ID =-1.25 A (VGS =-10V) ƽ RDS(ON) ˘ 340m¡ (VGS =-10V) ƽ RDS(ON) ˘ 550m¡ (VGS =-4.5V)
G1
S2
627
3D
MOSFET
8QLW PP
- DWH 6RXUFH 'UDLQ
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
- 1,- 2
Ta = 25ć
Ta = 70ć
Pulsed Drain Current
Avalanche Current
L=0.1m H
Power Dissipation
- 1,- 2
Ta = 25ć
Ta = 70ć
Thermal Resistance.Junction- to-Ambient t İ5 sec
Steady...
