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SI2309DS - P-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) =-60V ƽ ID =-1.25 A (VGS =-10V) ƽ RDS(ON) ˘ 340m¡ (VGS =-10V) ƽ RDS(ON) ˘ 550m¡ (VGS =-4.5V) G1 S2 627       3    3D 1 2               MOSFET 8QLW PP    .
  • DWH 6RXUFH 'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.
  • 1,.
  • 2 Ta = 25ć Ta = 70ć Pulsed Drain Current.

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Full PDF Text Transcription (Reference)

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SMD Type P-Channel Enhancement MOSFET SI2309DS (KI2309DS) Ƶ Features ƽ VDS (V) =-60V ƽ ID =-1.25 A (VGS =-10V) ƽ RDS(ON) ˘ 340m¡ (VGS =-10V) ƽ RDS(ON) ˘ 550m¡ (VGS =-4.5V) G1 S2 627       3    3D 1 2               MOSFET 8QLW PP    *DWH 6RXUFH 'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1,*2 Ta = 25ć Ta = 70ć Pulsed Drain Current Avalanche Current L=0.1mH Power Dissipation *1,*2 Ta = 25ć Ta = 70ć Thermal Resistance.Junction- to-Ambient t İ5 sec Steady State *1 Thermal Resistance.